Members of a multifunctional thin film research group have published two landmark studies that explain how to engineer and enhance the stability of ferroelectric hafnium oxides, which are compatible ...
Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching ...
NEW YORK (Reuters) - Hafnium was unknown to nearly everyone but a handful of scientists and engineers until late January, when Intel Corp. and IBM announced their faster, more efficient ...
A research team led by Professor Taesung Kim from the School of Mechanical Engineering at Sungkyunkwan University has developed hafnium oxide-based ferroelectric transistor arrays and successfully ...
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