Researchers find a faster way to etch deep holes for 3D NAND Plasma-based cryo-etching technique doubles etch speed, ...

To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.

Standard NAND flash storage is used in microSD cards, USB drives, and solid-state drives in computers and phones. To fit more gigabytes into smaller spaces, manufacturers ...

An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make these ...

Studies have shown that silicon nitride ceramics can outperform traditional oxide-based ceramics in terms of mechanical performance, making them a viable alternative for orthopedic applications[1][2].

A critical step in creating these stacks involves carving holes into alternating layers of silicon oxide and silicon nitride. The holes can be etched by exposing the layered material to chemicals in ...

Researchers from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Laboratory (PPPL) investigated ways to speed up the cryogenic reactive ion etching process for 3D NAND ...