Abstract: In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top ...
Abstract: We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/ Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate ...
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