Abstract: Ge/Si single-photon avalanche diodes (SPADs) play a pivotal role in advancing silicon-based optoelectronics by enabling high-sensitivity photodetection at short-wave infrared wavelengths, a ...
Abstract: We applied parametric inverse design to reduce bending loss in silicon nitride waveguides across two wavelength ranges. Compared to partial Euler bends, the method enables significantly ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results