Here, we report 4 nm thick a-BN films deposited by plasma enhanced atomic layer deposition (PE-ALD) with ultralow κ values of 1.43 (close to that of air, κ = 1) at operation frequencies of 1 MHz. The ...

An extremely-thin (0.3-0.4 nm) silicon nitride layer has been deposited on thermally grown SiO/sub 2/ by an atomic-layer-deposition (ALD) technique. The boron penetration through the stack gate ...