An extremely-thin (0.3-0.4 nm) silicon nitride layer has been deposited on thermally grown SiO/sub 2/ by an atomic-layer-deposition (ALD) technique. The boron penetration through the stack gate ...

Aluminum nitride is a promising passivation material for GaN-based micro-light-emitting diode (micro-LED) devices. However, depositing high-quality thin films at low temperatures without plasma ...

Inhibitor-free area-selective atomic layer deposition of SiO2 through chemoselective adsorption of an aminodisilane precursor on oxide versus nitride substrates.

Researchers from Deakin University (Australia) have developed a new material, boron-based nanosheets, which can mop up oil spills more efficiently than current methods and are recyclable. From the May ...

The suitability of atomic-layer-deposited (ALD) Si nitride to meet the crying need for gate dielectrics with an EOT in the territory of 1 nm, has been investigated through an extensive and comparative ...

The research of structure, roughness and friction coefficients of tantalum and tantalum oxide coatings on steel and glass substrates by the AFM method is presented.