By engineering the device structure of ferroelectric memory and introducing a nanogate-induced electric field concentration effect, the researchers developed a ferroelectric transistor capable of ...

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

Researchers used advanced electron ptychography to visualize atomic-scale defects inside modern transistors. The technique ...

For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...

The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared online February 17 2026 in ACS Nano from the lab of Aaron Franklin, a ...

Lab architecture used to test 2D semiconductors artificially boosts performance metrics, making it harder to assess whether these materials can truly replace silicon.

In the vast reaches of the semiconductor cosmos, a silent menace lurks—one that can obliterate years of design work in a fraction of a nanosecond. Electrostatic discharge (ESD) verification stands as ...

Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.

Chinese scientists unveil the world’s smallest ferroelectric transistor with ultralow power and tiny gate for future AI chips ...

For almost two decades, scientists have been trying to move beyond silicon, the material ...

Researchers at Peking University in China have developed the world’s smallest and most energy-efficient ...

A stunning new imaging breakthrough lets scientists see — and fix — the atomic flaws hiding inside tomorrow’s computer chips.