Abstract: In this article, we have designed an optimized ferroelectric tunnel junction (FTJ) device structure that inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The Al2O3 interlayer can block ...
Abstract: This article discusses the electrical stability of MOS structures on n- and p-type GaN for two different dielectrics, AlON and Al2O3, deposited by atomic layer deposition (ALD). Threshold ...
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