Electronic devices rely on materials whose electrical properties change with temperature, making them less stable in extreme ...
By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...
A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.
Javier Sanchez-Yamagishi, a physicist who studies 2D materials at the University of California, Irvine, likens the ...
Electronic devices rely on materials whose electrical properties change with temperature, making them less stable in extreme conditions. A discovery ...
Chinese semiconductor companies are actively investing in homegrown tech to mitigate the impact of US sanctions.
Chinese scientists have recently achieved a breakthrough in the fabrication of single-atom-layer metal materials boasting a ...
Scientists from Tomsk State University together with their colleagues from the Indian Institute of Technology (Indore) ...
Tom's Hardware on MSN1d
Chinese university designed 'world's first silicon-free 2D GAAFET transistor,' claims new bismuth-based tech is both the fastest and lowest-power transistor yetPeking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...
New Scientist on MSN1d
Metals can be squeezed into sheets just a few atoms thickSheets of bismuth, gallium, indium, tin and lead can now be made just a few atoms thick by crushing them at a high temperature and pressure between two sapphires ...
Interesting Engineering on MSN2d
China’s new silicon-free chip beats Intel with 40% more speed and 10% less energyPeking University researchers have developed a 2D transistor that operates 40% faster and uses 10% less energy than leading silicon chips.
Chinese scientists have recently achieved the fabrication of single-atom-layer metals with a thickness of merely ...
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