The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

In the optical system of extreme ultraviolet (EUV) lithography machines, silicon carbide (SiC) ceramic mirrors have become ...

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The F80’s long front overhang is entirely given over to aero. The low center air intake acts as the first in a series of ...

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Despite such impressive density improvement in battery technology, a report from GalaxyClub reveals that Samsung will again ...

Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage ...

This paper reports research performed on developing and optimizing a process recipe for the plasma etching of deep high-aspect ratio features into silicon carbide (SiC) material using an ...

The ion implantation process in semiconductor manufacturing faces multiple challenges such as high-energy ion beams, strong electric fields, and corrosive gases. Industrial ceramic components have ...

Ceramic products can be broadly identified into traditional (e.g., bricks, ceramic tiles, porcelain) and sophisticated (e.g., ...

The performance of SiC radiation sensors were also evaluated across the temperature range of 25 °C to 450 °C to assess their functionality as detectors for fast ion losses in plasma diagnostics of ...