Flash memory breakthrough could help supercharge NAND production for SSD, memory cards - but does it actually matter?
Researchers find a faster way to etch deep holes for 3D NAND Plasma-based cryo-etching technique doubles etch speed, ...
EurekAlert!21d
Improving the way flash memory is made
An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make ...
Sintx Technologies awarded patent on silicon nitride material by USPTO
SINTX Technologies (SINT) announced the issuance of U.S. Patent No. 12,239,761 by the U.S. Patent and Trademark Office, or USPTO. This newly ...
SINTX Receives Issuance of U.S. Patent for Silicon Nitride-Functionalized Zirconia-Toughened Alumina Ceramic Biomaterial
SINTX Technologies, Inc. (NASDAQ: SINT) (“SINTX” or the “Company”) an advanced ceramics company specializing in the development and commercialization of materials, components, and technologies for ...
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Plasma technique doubles etch rate for 3D NAND flash memory
More information: Thorsten Lill et al, Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride, Journal of Vacuum Science & Technology A (2024). DOI: 10.1116/6.0004019 ...
Breakthrough 3D NAND flash etching technique could turbocharge SSD production
Standard NAND flash storage is used in microSD cards, USB drives, and solid-state drives in computers and phones. To fit more gigabytes into smaller spaces, manufacturers ...
Semiconductor Engineering9d
Research Bits: Feb. 10
Researchers from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Laboratory (PPPL) investigated ways to speed up the cryogenic reactive ion etching process for 3D NAND ...
NextBigFuture2d
US and China in Gallium Oxide Semiconductor Race
The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium oxide chips. The Gallium oxide ...