The atomic layer deposition (ALD) of silicon nitride thin films is an advanced technique that utilises sequential, self-limiting reactions to produce high‐quality, conformal coatings with ...

Atomic layer deposition (ALD) has emerged as a vital technique for producing high-quality aluminum nitride (AlN) thin films, offering precise control over film thickness and composition.

The suitability of atomic-layer-deposited (ALD) Si nitride to meet the crying need for gate dielectrics with an EOT in the territory of 1 nm, has been investigated through an extensive and comparative ...

An extremely-thin (0.3-0.4 nm) silicon nitride layer has been deposited on thermally grown SiO/sub 2/ by an atomic-layer-deposition (ALD) technique. The boron penetration through the stack gate ...

Inhibitor-free area-selective atomic layer deposition of SiO2 through chemoselective adsorption of an aminodisilane precursor on oxide versus nitride substrates.

Techniques based on atomic layer deposition (ALD), a special type of chemical vapor deposition, allow for the growth of ultra-thin and conformal films of inorganic materials using sequential, ...

Jewook Park R&D Staff Contact [email protected] Bio I am interested in exploring quantum matter in atomic scale. I exploit scanning tunneling microscopy and spectroscopy (STM/S) to characterize ...

Researchers from Deakin University (Australia) have developed a new material, boron-based nanosheets, which can mop up oil spills more efficiently than current methods and are recyclable. From the May ...

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The research of structure, roughness and friction coefficients of tantalum and tantalum oxide coatings on steel and glass substrates by the AFM method is presented.