Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

Researchers used advanced electron ptychography to visualize atomic-scale defects inside modern transistors. The technique ...

By engineering the device structure of ferroelectric memory and introducing a nanogate-induced electric field concentration effect, the researchers developed a ferroelectric transistor capable of ...

Smart glasses have been a thing since the introduction of Google Glasses in 2012. Each year after, smart glasses are billed ...

Cornell researchers have used advanced electron microscopy to identify "mouse bite" defects in 3D transistors for the first time ...

A stunning new imaging breakthrough lets scientists see — and fix — the atomic flaws hiding inside tomorrow’s computer chips.

Cornell researchers have used high-resolution 3D imaging to detect, for the first time, the atomic-scale defects in computer chips that can sabotage their performance. The imaging method, which was ...

The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...

Innatera adopts Synopsys simulation technology to help design neuromorphic chips that enable low-power AI for wearables, smart home devices, and digital twin industrial sensors .

A common lab setup can inflate 2D transistor performance by up to five times, raising questions about how future chips are ...

Lab architecture used to test 2D semiconductors artificially boosts performance metrics, making it harder to assess whether these materials can truly replace silicon.